Highly reflective low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer

被引：18

作者：

Jang, Ho Won ^{[1
]}

Son, Jun Ho ^{[1
]}

Lee, Jong-Lam ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, POSTECH, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2430405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metallization scheme with high reflectance and smooth surface morphology has been developed for obtaining low resistance Ohmic contacts on p-type GaN. Excellent Ohmic characteristics with a specific contact resistivity as low as 9.0x10(-6) Omega cm(2) were obtained by annealing evaporated Ni (10 A)/Ag (1500 A)/Mg (500 A) contact at 450 degrees C for 2 min in O-2 ambient. Additionally, a high reflectance over 80% was observed in the 400-500 nm wavelength range. The Mg overlayer suppressed excessive incorporation of oxygen into the Ni and Ag layers during oxidation annealing, leading to high reflectance and smooth surface quality of the Ohmic contact.

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页数：3

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