Compositional tuning of ferromagnetism in Ga1-xMnxP

被引：9
|
作者：
Farshchi, R.
Scarpulla, M. A.
Stone, P. R.
Yu, K. M.
Sharp, I. D.
Beeman, J. W.
Silvestri, H. H.
Reichert, L. A.
Haller, E. E.
Dubon, O. D. [1 ]
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源：
SOLID STATE COMMUNICATIONS | 2006年 / 140卷 / 9-10期
关键词：
ferromagnetic semiconductors; laser processing; impurities in semiconductors;
D O I：
10.1016/j.ssc.2006.09.010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 degrees C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with X. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：443 / 446
页数：4
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