Combined polarized Raman and atomic force microscopy: In situ study of point defects and mechanical properties in individual ZnO nanobelts

被引：25

作者：

Lucas, Marcel ^{[1
]}

Wang, Zhong Lin ^{[2
]}

Riedo, Elisa ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

atomic force microscopy; elastic moduli; II-VI semiconductors; nanobelts; point defects; Raman spectra; wide band gap semiconductors; zinc compounds; OXIDE NANOWIRES; DEPENDENCE; SPECTRA;

D O I：

10.1063/1.3177065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method, polarized Raman (PR) spectroscopy combined with atomic force microscopy (AFM), to characterize in situ and nondestructively the structure and the physical properties of individual nanostructures. PR-AFM applied to individual ZnO nanobelts reveals the interplay between growth direction, point defects, morphology, and mechanical properties of these nanostructures. In particular, we find that the presence of point defects can decrease the elastic modulus of the nanobelts by one order of magnitude. More generally, PR-AFM can be extended to different types of nanostructures, which can be in as-fabricated devices.

引用

页数：3

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