Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate

被引:29
|
作者
Cho, M [1 ]
Park, J
Park, HB
Hwang, CS
Jeong, J
Hyun, KS
Kim, YW
Oh, CB
Kang, HS
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Ever Tek Co, Sungnam 462120, Kyunggi Do, South Korea
[4] Samsung Elect Co Ltd, Syst LSI, Semicond Business, Suwon 449711, South Korea
关键词
D O I
10.1063/1.1520333
中图分类号
O59 [应用物理学];
学科分类号
摘要
HfO2 thin films were deposited on SiNx-passivated Si wafers at 300 and 400 degreesC using an atomic-layer-deposition technique. The SiNx films were deposited by another atomic-layer-deposition process at 595 degreesC. The SiNx films worked well as barriers to both Si and O diffusion, resulting in a small decrease in the capacitance density even after post-annealing at temperatures up to 1000 degreesC, compared either to the HfO2 film deposited directly on Si or an Al2O3-barrier-layer/Si substrate. The decrease in the capacitance density after post-annealing, although relatively small, was due to Hf and O diffusion into the interface layer. Interestingly, post-annealing under an atmosphere containing small amount of oxygen (similar to1%) decreased the capacitance density to a smaller degree. However, the interface and bulk capturing of the carrier was serious, resulting in a rather large hysteresis (similar to100 mV) voltage in the capacitance-voltage measurements even after post-annealing. (C) 2002 American Institute of Physics.
引用
收藏
页码:3630 / 3632
页数:3
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