INTERFACIAL STRUCTURE OF Fe3Si/FeSi2 LAYERED FILMS DEPOSITED ON Si(111) AT ELEVATED SUBSTRATE-TEMPERATURES

被引：2

作者：

Takeda, Kaoru ^{[1
,2
]}

Yoshitake, Tsuyoshi ^{[1
]}

Sakamoto, Yoshiki ^{[1
]}

Hara, Daisuke ^{[1
]}

Itakura, Masaru ^{[1
]}

Kuwano, Noriyuki ^{[1
]}

Nagayama, Kunihito ^{[3
]}

机构：

[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] Fukuoka Inst Technol, Dept Elect Engn, Higashi Ku, Fukuoka 8110295, Japan

[3] Kyushu Univ, Dept Aeronaut & Astronaut, Nishi Ku, Fukuoka 8190395, Japan

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 17期

关键词：

Fe3Si; FeSi2; iron silicide; heterostructure; interface; EPITAXIAL-GROWTH; IRON DISILICIDE; THIN-FILMS; SUPERLATTICES;

D O I：

10.1142/S0217979209062943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Influence of substrate-temperature on the interfacial structure of Fe3Si/FeSi2 layered films deposited on a Si(111) substrate were studied. Fe3Si/FeSi2 films with sharp interfaces were grown at room substrate-temperature. At a substrate-temperature of 300 degrees C, interfaces between the Fe3Si and FeSi2 layers were obviously unsharpened, while the crystallinity of Fe3Si was enhanced. The compositional periodic structure was barely unsharpened and it was nearly the same as that of the films deposited at room substrate-temperature. Epitaxial growth of Fe3Si layers across FeSi2 layers was carried out. This substrate-temperature is the upper limit at which the heterostructure formation takes place. At 400 degrees C, epsilon-FeSi was formed due to activated interdiffusion, and the structure of Fe3Si changed partially from B2-type to DO3-type.

引用

页码：3543 / 3549

页数：7

共 15 条

[1] Structure and magnetism of Fe/Si multilayers grown by ion-beam sputtering [J].