Low-Power Double-Gate ZnO TFT Active Rectifier

被引：10

作者：

Sun, Kaige G. ^{[1
]}

Choi, Kyusun ^{[2
]}

Jackson, Thomas N. ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Active rectifier; thin film transistors; TFT; double gate; plasma-enhanced atomic layer deposition; zinc oxide; ZnO TFTs; oxide TFTs; oxide semiconductor transistors; energy harvesting; ENERGY;

D O I：

10.1109/LED.2016.2527832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a low-power full-wave active rectifier using double-gate ZnO thin-film transistors (TFTs). The active rectifier is designed to operate at low voltage and low power to allow integration with mechanical energy harvesters. Double-gate TFTs allow the TFT threshold voltage to be tuned and enable enhancement/depletion-mode circuits with high gain and low power consumption. The active rectifier is designed to work with input voltage as small as 200-mV peak-to-peak and frequencies up to 4 Hz. The active rectifier circuit includes 12 TFTs and operates with a power consumption <150 nW. The low fabrication temperature for the active rectifier circuit allows direct and distributed integration with micro-electromechanical energy harvesters.

引用

页码：426 / 428

页数：3

共 50 条

[21] An 11.8 nA ultra-low power active diode using a hysteresis common gate comparator for low-power energy harvesting systems
Matsumoto K.
Asano H.
Nakazawa Y.
Kuroki N.
Numa M.
Maida O.
Kanemoto D.
Hirose T.
IEICE Electronics Express, 2020, 17 (11) : 1 - 6
[22] An 11.8 nA ultra-low power active diode using a hysteresis common gate comparator for low-power energy harvesting systems
Matsumoto, Kaori
Asano, Hiroki
Nakazawa, Yuichiro
Kuroki, Nobutaka
Numa, Masahiro
Maida, Osamu
Kanemoto, Daisuke
Hirose, Tetsuya
IEICE ELECTRONICS EXPRESS, 2020, 17 (11):
[23] Design of Efficient Rectifier for Low-Power Wireless Energy Harvesting at 2.45 GHz
Lee, Tag Jong
Patil, Pavan
Hu, Chiao Yi
Rajabi, Mohammad
Farsi, Saeed
Schreurs, Dominique M. M. -P.
2015 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2015, : 47 - 49
[24] Variation Estimation and Compensation Technique in Scaled LTPS TFT Circuits for Low-Power Low-Cost Applications
Li, Jing
Kang, Kunhyuk
Roy, Kaushik
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2009, 28 (01) : 46 - 59
[25] Design and analysis of high-performance double-gate ZnO nano-structured thin-film ISFET for pH sensing applications
Srikanya, Dasari
Bhat, Aasif Mohammad
Sahu, Chitrakant
MICROELECTRONICS JOURNAL, 2023, 137
[26] Proposal of a 2.4 GHz Rectifier With Temperature Range Trimming for Low-Power RF Energy Harvesting
Diniz, Renan
Da Silva, Vinicius Santana
da Paz, Humberto Pereira
Trevisoli, Renan
Casella, Ivan Roberto Santana
Capovilla, Carlos Eduardo
IEEE ACCESS, 2024, 12 : 167278 - 167287
[27] Design of Dual-Band Rectifier Circuit for RF Energy Harvesting Using Double-Gate Graphene Nanoribbon (GNR) Vertical Tunnel FET
Zohmingliana
Choudhuri, Bijit
Bhowmick, Brinda
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2024, 70 (01) : 167 - 172
[28] Simulation and performance study of low-power magnetron sputtered ZnO methane sensor
Li J.-M.
Jiao M.-Z.
Qian C.
Gongcheng Kexue Xuebao/Chinese Journal of Engineering, 2023, 45 (06): : 987 - 994
[29] A 13.56 MHz Low-Power, Single-Stage CMOS Voltage-Boosting Rectifier for Wirelessly Powered Biomedical Implants
Hosseini, Seyed Morteza
Maghami, Mohammad Hossein
Amiri, Parviz
Sawan, Mohamad
ELECTRONICS, 2023, 12 (14)
[30] A low-power gate driver integrated by IZO-TFTs employing single negative power source
Chen, Jun-Wei
Hu, Yu-Feng
Chen, Zhuo-Jia
Zhou, Lei
Wu, Wei-Jing
Zou, Jian-Hua
Xu, Miao
Wang, Lei
Peng, Jun-Biao
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (06)

← 1 2 3 4 5 →