Effect of interfacial silicon on the structural stability of C54-TiSi2 on SiO2

被引：3

作者：

Suh, D ^{[1
]}

Kim, HS ^{[1
]}

Kang, JY ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Compound Semicond Res Dept, Microelect Technol Lab, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of interconnect C54-TiSi2 on SiO2 substrates suffers severe structural instability upon rapid thermal anneal. To understand the structural instability from a mechanistic point of view, we investigated the interfacial features of the C54-TiSi2 on SiO2 using Auger electron spectroscopy and cross-sectional transmission electron microscopy. As a result, we noted that the surplus silicon layer retained at the interface between the C54-TiSi2 thin film and the SiO2 substrates is indispensable for the stabilization of the C54-TiSi2 on SiO2. We explained the affirmative role of the silicon layer retained at the interface in terms of the residual stress of the C54-TiSi2 thin film. (C) 2000 American Institute of Physics. [S0003-6951(00)01325-5].

引用

页码：3697 / 3699

页数：3

共 7 条

[1]

ALLINSON DL, 1975, EPITAXIAL GROWTH A

[2] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].