Oxidation kinetics of low-oxygen silicon carbide fiber

被引：55

作者：

Shimoo, T ^{[1
]}

Toyoda, F ^{[1
]}

Okamura, K ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Coll Engn, Dept Met & Mat Sci, Sakai, Osaka 5998531, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2000年 / 35卷 / 13期

关键词：

D O I：

10.1023/A:1004883607913

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of partial pressure and temperature on the oxidation rate of low-oxygen silicon carbide fiber (Hi-Nicalon) has been investigated. The initial oxidation rate was described by a two-dimensional disc contracting formula for reaction control, and the activation energy was 155 kJ/mol. The rate at the later stage of oxidation obeyed the equation for diffusion control, and the activation energy was 109 kJ/mol. Both the rate constants were proportional to oxygen partial pressure. The diffusion species through the SiO2 film are considered to be oxygen molecules. (C) 2000 Kluwer Academic Publishers.

引用

页码：3301 / 3306

页数：6

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