Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation

被引:40
作者
Lee, H. K. [1 ]
Song, Y. M. [2 ]
Lee, Y. T. [2 ]
Yu, J. S. [1 ]
机构
[1] Kyung Hee Univ, Dept Elect Engn, Yongin 446701, South Korea
[2] Gwangju Inst Sci & Technol, Dept Informat & Commun, Gwangiu 500712, South Korea
关键词
VCSELs; InGaAs/GaAs MQWs; Thermal analysis; Thermal resistance; SURFACE-EMITTING LASERS; QUANTUM CASCADE LASERS; BOUNDARY RESISTANCE; CONDUCTIVITY; PARAMETERS; WELL;
D O I
10.1016/j.sse.2009.06.005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The asymmetric intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs), operating at lambda similar to 980 nm, with different oxide aperture diameters were fabricated and their thermal analysis was theoretically performed using a three-dimensional cylindrical heat dissipation model. The heat flux, temperature profile, and thermal resistance (R-th) of the devices were investigated by incorporating heat source values, obtained from experimentally measured results, into the thermal simulation. For the fabricated VCSELs with benzocyclobutene passivation layer, the R-th decreased from 4612 K/W to 1130 K/W as the oxide aperture diameter (D-a) increased from 8 mu m to 16 mu m and it increased significantly below 8 mu m. The use of the thin substrate and the passivation layer with a high conductivity enhances the heat dissipation, allowing for a low R-th. Furthermore, thick Au layers on contact: pads and top DBR in intracavity-contacted VCSEL structures help increase heat removal from the active region. For D-a = 8 mu m and 16 mu m, the VCSELs with SiNx passivation layer, 5 mu m thick extra Au layer, and 100 mu m thick substrate indicate R-th = 3050 K/W and 778 K/W, respectively, leading to an improvement by >30% compared to the fabricated devices. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1086 / 1091
页数:6
相关论文
共 25 条
[21]   Red VCSEL for high-temperature applications [J].
Rossbach, R ;
Ballmann, T ;
Butendeich, R ;
Schweizer, H ;
Scholz, F ;
Jetter, M .
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :549-554
[22]   Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices [J].
Sarua, Andrei ;
Ji, Hangfeng ;
Hilton, K. P. ;
Wallis, D. J. ;
Uren, Michael J. ;
Martin, T. ;
Kuball, Martin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3152-3158
[23]   HIGH-EFFICIENCY SUBMILLIAMP VERTICAL-CAVITY LASERS WITH INTRACAVITY CONTACTS [J].
SCOTT, JW ;
THIBEAULT, BJ ;
YOUNG, DB ;
COLDREN, LA ;
PETERS, FH .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) :678-680
[24]   Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors [J].
Turin, Valentin O. ;
Balandin, Alexander A. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
[25]   Analysis of key parameters affecting the thermal behavior and performance of quantum cascade lasers [J].
Zhu, Cheng ;
Zhang, Yong-gang ;
Li, Ai-zhen ;
Tian, Zhao-bing .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)