Effects of 60Co γ-ray irradiation on microstructure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films

被引:21
作者
Wang, Zan [1 ,2 ]
Jiang, Wei [1 ]
Li, San-xi [1 ]
Tong, Jun-sheng [3 ]
机构
[1] Shenyang Univ Technol, Shenyang 110870, Peoples R China
[2] Shenyang Univ Chem Technol, Shenyang 110142, Peoples R China
[3] Liaoning Prov Acad Agr Sci, Radiat Ctr, Shenyang 110142, Peoples R China
基金
高等学校博士学科点专项科研基金;
关键词
Co-60 gamma-ray irradiation; Bismuth compounds; Ferroelectric property; Memory device; PIEZOELECTRIC PROPERTIES; IONIZING-RADIATION; DIELECTRIC-PROPERTIES; PZT CAPACITORS; CERAMICS; MEMORIES; ORIENTATION; MECHANISMS;
D O I
10.1016/j.nimb.2015.10.005
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt/Ti/SiO2/Si substrates through sol-gel method. Films underwent Co-60 gamma-ray irradiation with different doses; 0, 50, 100 and 150 kGy, respectively. Impacts of gamma-ray on the microstructure, ferroelectric properties, leakage current density and fatigue characteristic were studied in detail. The results of SEM images show that grain patterns become irregular. Remnant polarization (2Pr) and coercive field (2Ec) decrease with irradiation dose increase. C-V curves reveal obvious asymmetry along y-axis. The irradiated thin films display lower leakage current density and fatigue endurance up to more than 10(10) switching cycles. These results suggest that radiation can improve the film performance in some areas. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 5
页数:5
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