YBa2Cu3O7-δ thin films with enhanced film properties grown on sapphire using Y2O3/CeO2 bi-layer buffer

被引：1
作者：
Develos-Bagarinao, K. [1 ]
Yamasaki, H. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Superconductor Technol Grp, Energy Technol Res Inst, Tsuchiura, Ibaraki 3058568, Japan
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 24期
关键词：
Cerium oxide; Yttrium oxide; YBa2Cu3O7-delta; Pulsed laser deposition; Atomic force microscopy; X-ray diffraction; PULSED-LASER DEPOSITION; LAYERS; CEO2; Y2O3; DENSITY; DEVICES; SYSTEM;
D O I：
10.1016/j.tsf.2009.04.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly epitaxial, microcrack-free thin films of YBa2Cu3O7-delta (YBCO) have been grown by pulsed laser deposition on sapphire substrates with a double buffer Of Y2O3/CeO2. The Y2O3 layer, which has excellent compatibility with CeO2 and YBCO, has been found to be beneficial in reducing the surface porosity of YBCO films as well as inhibiting a-axis-oriented epitaxial growth. The reduction in porosity is attributed to the presence of the Y2O3 layer which acts as a suitable barrier for the chemical reaction occurring at high deposition temperatures between YBCO and CeO2. Due to the improvement in film quality and surface morphology, enhancement of the self-field critical current density (J(c), 77.3 K) by as high as 30% was obtained for a 650-nm thick YBCO film deposited on Y2O3/CeO2 bi-layer buffer compared to simultaneously-deposited YBCO film on CeO2 single-layer buffer only. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：6539 / 6545
页数：7
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