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- [2] Interaction of positrons with vacancy-oxygen complexes and oxygen clusters in silicon EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON, 1996, 17 : 337 - 344
- [4] Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon PHYSICAL REVIEW B, 2007, 75 (15):
- [5] THE EFFECT OF CARBON AND BORON ON THE ACCUMULATION OF VACANCY-OXYGEN COMPLEXES IN SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 149 - 152
- [8] Lattice disorder effects on the vacancy-oxygen centre in ion-irradiated silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 233 - 238
- [10] INFLUENCE OF ACCEPTOR IMPURITY CONCENTRATION ON RATE OF FORMATION OF VACANCY-OXYGEN COMPLEXES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1066 - 1067