Energy spectrum of InAs/GaSb heterostructures

被引：15

作者：

Laikhtman, B

deLeon, S

Shvartsman, LD

机构：

[1] Racah Institute of Physics, Hebrew University

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 05期

关键词：

quantum wells; electronic band structure;

D O I：

10.1016/S0038-1098(97)00290-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier. (C) 1997 Elsevier Science Ltd.

引用

收藏

页码：257 / 262

页数：6

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