Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance

被引：5

作者：

Fu, Ssu-I ^{[1
]}

Chen, Tzu-Pin

Liu, Rong-Chau

Cheng, Shiou-Ying

Lai, Po-Hsien

Tsai, Yan-Ying

Hung, Ching-Wen

Liu, Wen-Chau

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 04期

关键词：

D O I：

10.1149/1.2435628

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, the characteristics of the InGaP/GaAs heterojunction bipolar transistors with different emitter-edge-thinning thickness were systematically investigated. A stronger downward-band-bending phenomenon was observed at the edge of emitter-edge-thinning intersection with the exposed base surface. This band bending induced the presence of a potential saddle point, which substantially increased the recombination rates and electron densities. In addition, the decision of emitter-edge-thinning thickness plays a key role in reducing surface recombination at the potential saddle point. As the emitter-edge-thinning thickness was selected between 100 and 200 A, the lowest recombination rate and electron density and highest dc current gain could be obtained. Furthermore, good agreements between the theoretical analyses and experimental results were found. (c) 2007 The Electrochemical Society.

引用

页码：H289 / H292

页数：4

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