Polysilicon nanofilm pressure sensor

被引：28

作者：

Liu, Xiaowei ^{[1
,2
]}

Lu, Xuebin ^{[1
]}

Chuai, Rongyan ^{[2
]}

Shi, Changzhi ^{[1
]}

Suo, Chunguang ^{[1
]}

机构：

[1] Harbin Inst Technol, MEMS Ctr, Harbin 150001, Peoples R China

[2] Shenyang Univ Technol, Informat Sci & Engn Sch, Shenyang 110023, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2009年 / 154卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Pressure sensor; Polysilicon nanofilm; Piezoresistive property; Temperature characteristic; MEMS; POLYCRYSTALLINE; FABRICATION;

D O I：

10.1016/j.sna.2009.07.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Utilizing 80 nm polysilicon nanofilm as piezoresistors, a pressure sensor with high performance is developed. The complete fabrication process is described. The pressure properties of the sensor were measured at the temperature from 0 to 200 degrees C. For 0.6 MPa full scale pressure, the sensitivity is 23.00 mV/V/MPa at 0 degrees C and 18.27 mV/V/MPa at 200 degrees C, the temperature coefficient of sensitivity (TCS) is about -0.098%/degrees C without any compensation. The temperature coefficient of offset (TCO) is about -0.017%/degrees C. Because of the good piezoresistive and temperature characteristics of polysilicon nanofilm, the pressure sensor demonstrates a better performance. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：42 / 45

页数：4

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