High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

被引：166

作者：

Saxena, V ^{[1
]}

Su, JN ^{[1
]}

Steckl, AJ ^{[1
]}

机构：

[1] Univ Cincinnati, Dept Elect & Comp Engn, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 03期

关键词：

power devices; Schottky diodes; silicon carbide;

D O I：

10.1109/16.748862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated 1 kV 4H and 6H SIC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these I kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-rag diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10(6) to 10(7) at 27 degrees C and in excess of 10(6) up to 300 degrees C.

引用

页码：456 / 464

页数：9

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