Electrical spin injection in forward biased Schottky diodes based on InGaAs-GaAs quantum well heterostructures

被引：18

作者：

Baidus, N. V. ^{[1
]}

Vasilevskiy, M. I.

Gomes, M. J. M.

Dorokhin, M. V.

Demina, P. B.

Uskova, E. A.

Zvonkov, B. N.

Kulakovskii, V. D.

Brichkin, A. S.

Chernenko, A. V.

Zaitsev, S. V.

机构：

[1] NI Lobachevskii State Univ, Phys Tech Res Inst, Nizhnii Novgorod 603950, Russia

[2] Univ Minho, Ctr Fis, P-4710057 Braga, Portugal

[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1063/1.2372579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of the injected holes was detected by measuring the circular polarization of the electroluminescence (EL) from the near surface InGaAs/GaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T=2 K for the LESD structure with Au-Ni-Au Schottky contact. (c) 2006 American Institute of Physics.

引用

页数：3

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