Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement

被引：14

作者：

Tabuchi, M. ^{[1
]}

Takeda, Y.

机构：

[1] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期

关键词：

crystal truncation rod; X-ray diffraction; metalorganic vapor phase epitaxy; semiconducting III-V compounds;

D O I：

10.1016/j.jcrysgro.2006.10.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The origin of the X-ray CTR scattering have been described in brief in order to make it clear why the X-ray CTR scattering measurement can reveal the interface structure. Then, some examples of the results obtained by the X-ray CTR scattering measurement have been shown. The distributions of group-V and III atoms in InP/GaInAs/InP double-heterostructure samples have mainly been discussed. The change of the distribution of As at the interface with the change of H(2)-purge time has been quantitatively shown at an atomic scale by the X-ray CTR scattering measurement, which has demonstrated the high resolution and significance of the X-ray CTR scattering measurement in the investigation of the III-V compound semiconductor heterostructures. The distribution of group-III atoms has also been investigated by the X-ray CTR scattering measurement. The results have suggested that the interface has not been so abrupt as expected, and it has been more difficult to control the distributions of group-III atoms than group-V atoms. The results have shown how important the observation by the X-ray CTR scattering has been to understand the interface structure. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：12 / 17

页数：6

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