Reliability of GaN HEMTs: Current Status and Future Technology

被引：34

作者：

Ohki, Toshihiro ^{[1
,2
]}

Kikkawa, Toshihide ^{[1
,2
]}

Inoue, Yusuke ^{[1
,2
]}

Kanamura, Masahito ^{[1
,2
]}

Okamoto, Naoya ^{[1
,2
]}

Makiyama, Kozo ^{[1
,2
]}

Imanishi, Kenji ^{[1
,2
]}

Shigematsu, Hisao ^{[1
,2
]}

Joshin, Kazukiyo ^{[1
,2
]}

Hara, Naoki ^{[1
,2
]}

机构：

[1] Fujitsu Ltd, 10-1 Morinosato Wakamiya, Kanagawa 2430197, Japan

[2] Fujitsu Lab Ltd, Kanagawa 2430197, Japan

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

GaN; HEMT; reliability; gate leakage current; gate edge; silicide; oxidation; CURRENT COLLAPSE; ALGAN/GAN HEMT; MECHANISM; TRANSISTORS;

D O I：

10.1109/IRPS.2009.5173225

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure for GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer are used to realize high efficiency and high reliability by suppressing current collapse and quiescent current (I-dsq)-drift. Finally, we propose a new device process around the gate electrode for further improvement of reliability. Preventing gate edge silicidation leads to reduced gate leakage current and suppression of initial degradation in a DC-stress test under high-temperature and high-voltage conditions. Gate edge engineering plays a key role in reducing the gate leakage current and improving reliability.

引用

页码：61 / +

页数：3

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