Ultrafast relaxation of hot phonons in graphene-hBN heterostructures

被引：37

作者：

Golla, Dheeraj ^{[1
]}

Brasington, Alexandra ^{[1
]}

LeRoy, Brian J. ^{[1
]}

Sandhu, Arvinder ^{[1
]}

机构：

[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

来源：

APL MATERIALS | 2017年 / 5卷 / 05期

基金：

美国国家科学基金会;

关键词：

ELECTRON-TRANSPORT; DYNAMICS; NANOTUBES;

D O I：

10.1063/1.4982738

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fast carrier cooling is important for high power graphene based devices. Strongly coupled optical phonons play a major role in the relaxation of photo-excited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon bottleneck that plagues cooling in graphene devices. (C) 2017 Author(s).

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页数：6

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