Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques

被引：22

作者：

Kalevich, VK ^{[1
]}

Zakharchenya, BP ^{[1
]}

Kavokin, KV ^{[1
]}

Petrov, AV ^{[1
]}

LeJeune, P ^{[1
]}

Marie, X ^{[1
]}

Robart, D ^{[1
]}

Amand, T ^{[1
]}

Barrau, J ^{[1
]}

Brousseau, M ^{[1
]}

机构：

[1] INST NATL SCI APPL, PHYS MAT CONDENSEE LAB, CNRS ERS 5646, F-31077 TOULOUSE, FRANCE

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

GAAS;

D O I：

10.1134/1.1129913

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A method of measuring the sign of the conduction-electron g factor in semiconductor quantum-wells is proposed, based on determination of the sense of electron-spin Larmor precession by the Hanle effect or spin-quantum-beat techniques under oblique incidence of pump light on the sample, with the luminescence detected at an angle to the pump beam. This method has been used to measure the sign of the transverse electronic g-factor component in GaAs/Al0.3Ga0.7As quantum-wells of various widths. It has been shown experimentally that the average spin of electrons photocreated in quantum-wells may not coincide with the pump light direction. Expressions for the oscillations of the luminescence circular polarization in the spin-quantum-beat regime and in the Hanle effect have been obtained, taking into account the electron spin relaxation anisotropy. (C) 1997 American Institute of Physics.

引用

页码：681 / 685

页数：5

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