Experimental Demonstration of Multi-Bit Optical Buffer Memory Using 1.55-μm Polarization Bistable Vertical-Cavity Surface-Emitting Lasers

被引：70

作者：

Katayama, Takeo ^{[1
]}

Ooi, Tomohiro ^{[1
]}

Kawaguchi, Hitoshi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2009年 / 45卷 / 11期

关键词：

All-optical switching; optical buffer memory; polarization bistability; vertical-cavity surface-emitting laser (VCSEL); SHIFT REGISTER;

D O I：

10.1109/JQE.2009.2029067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel all-optical buffer memory using 1.55-mu m polarization bistable vertical-cavity surface-emitting lasers (VCSELs). A one-bit data is stored as one of two orthogonal polarization states of a VCSEL in this memory. The polarization state is transferred from the VCSEL to another VCSEL which is optically connected in cascade as a shift register. A 4-bit optical buffer memory is constructed using two sets of the shift-register memory connected in parallel. These results show the technical feasibility of multi-bit optical buffer memory.

引用

页码：1495 / 1504

页数：10

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