Capabilities of CdZnTe-based Schottky diodes for detection of optical and X/γ-ray radiation

被引：1
|
作者：
Maslyanchuk, O. L. [1 ]
Kosyachenko, L. A. [1 ]
Gnatyuk, V. A. [2 ]
Aoki, T. [2 ]
Rarenko, I. M. [1 ]
Sklyarchuk, V. M. [1 ]
机构：
[1] Chernivtsi Natl Univ, Kotsyubinsky Str 2, UA-58012 Chernovtsy, Ukraine
[2] Univ Shizuoka, Res Inst Elect, Shizuoka 4328011, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期
关键词：
D O I：
10.1002/pssc.200881226
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
. The electrical and photoelectric properties of Schottky diodes based on low-resistivity (rho = 10(3)-10(4) Omega.cm) and semi-insulating (rho approximate to 10(7) Omega.cm) Cd1-xZnxTe (x = 0-0.2) single crystals are investigated and use of the diodes as detectors, respectively, for optical and X- and gamma-ray radiation is analyzed. The charge transport properties of both types of Schottky diodes are shown to be governed by generation-recombination in the space-charge region in the frame of the Sah-Noyce-Shockley theory. The detection spectrum of Cd1-xZnxTe-bassed X/gamma-ray detectors with Schottky diodes is studied (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1282 / +
页数：2
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