Tin oxide thin films prepared by sol-gel for PV applications

被引：8

作者：

Gul, Sehrish ^{[1
]}

Azam, Anam ^{[1
]}

Imrose, Nazmina ^{[1
]}

Riaz, Saira ^{[1
]}

Naseem, Shahzad ^{[1
]}

机构：

[1] Univ Punjab, Ctr Excellence Solid State Phys, Lahore 54590, Pakistan

来源：

MATERIALS TODAY-PROCEEDINGS | 2015年 / 2卷 / 10期

关键词：

Tin oxide; Sol-gel; Photovoltaic; Thin films; TEMPERATURE;

D O I：

10.1016/j.matpr.2015.11.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Due to unique electronic and optical properties tin oxide has gained much attention. Tin oxide (SnO2) thin films have been synthesized using conventional sol-gel method and are annealed at 200 to 500 degrees C. X-ray diffraction (XRD) pattern indicates polycrystalline SnO2 with orthorhombic crystal structure. With the increase in calcination temperature of SnO2 an increase in crystallite size shows coalescence of nuclei. High temperature annealing of SnO2 results in increase in crystallite size and decrease in dislocation density. SnO2 thin films have high value of transmission (similar to 85%) and band gap of 3.6eV. These prepared thin films with high value of transmission and less defects can be successfully employed in solar cells as window layer. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：5793 / 5798

页数：6

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