Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure

被引：3

作者：

Lin, K. I. ^{[1
]}

Lin, H. C. ^{[1
]}

Tsai, J. T. ^{[1
]}

Cheng, C. S. ^{[1
]}

Lu, Y. T. ^{[1
]}

Hwang, J. S. ^{[1
]}

Chiu, P. C. ^{[2
]}

Chen, S. H. ^{[2
]}

Chyi, J. I. ^{[2
]}

Wang, T. S. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 14期

关键词：

MODULATION SPECTROSCOPY; PHOTOREFLECTANCE; INALAS; GAAS;

D O I：

10.1063/1.3246603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n(+) (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level V-F and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D-s is estimated as approximately 1.91 x 10(13) cm(-2), and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65Sb0.35 SIN+ structure is further demonstrated. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3246603]

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页数：3

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