Galvanostatic electrochemical deposition of Cu-doped Mg(OH)2 thin films and fabrication of p-n homojunction

Conduction type control of transparent conducting materials is challenging. In this study, novel conductive p-type and n-type Cu-doped Mg(OH)(2) thin films are obtained. The thin films are fabricated by both potentiostatic and galvanostatic electrochemical deposition with solutions containing 20 mM Mg(NO3)(2) and different amounts (1-20 mM) of Cu(NO3)(2). All specimens show high transmittance values more than 90 % in the visible range. The galvanostatically deposited films are n-type with 1 mM Cu in the solution while they are p-type with Cu amount of 3 mM or more. X-ray photoelectron spectroscopy results ascertain the presence of Cu+ and less amount of Cu2+ in the films. A p-n homojunction is fabricated by potentiostatic and galvanostatic deposition, and its current-voltage characteristic shows rectification properties.