Critical Gate Voltage and Digital Breakdown: Extending Post-Breakdown Reliability Margin in Ultrathin Gate Dielectric with Thickness < 1.6 nm

被引：2

作者：

Lo, V. L. ^{[1
]}

Pey, K. L. ^{[1
]}

Ranjan, R. ^{[2
]}

Tung, C. H. ^{[2
]}

Shih, J. R. ^{[2
]}

Wu, Kenneth ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Singapore, Singapore

[2] TSMC, Hsinchu, Taiwan

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

Gate oxide breakdown; progressive breakdown; DEGRADATION;

D O I：

10.1109/IRPS.2009.5173332

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The saturation of a critical gate voltage at 2-2.4 V for SiON with thickness < 1.6 nm (EOT < 1.4 nm) extends the role of digital breakdown (BD) in prolonging progressive BD at nominal voltages. As a result, the post-BD gate leakage degradation rate, which is extrapolated from a high voltage using the conventional approach, is highly overestimated, warranting one to revise the post-BD reliability assessment.

引用

页码：696 / +

页数：2

Critical Gate Voltage and Digital Breakdown: Extending Post-Breakdown Reliability Margin in Ultrathin Gate Dielectric with Thickness &lt; 1.6 nm

Critical Gate Voltage and Digital Breakdown: Extending Post-Breakdown Reliability Margin in Ultrathin Gate Dielectric with Thickness < 1.6 nm