Ultrathin Si3N4 films deposited from dichlorosilane for gate dielectrics using single-wafer hot-wall rapid thermal CVD

被引：0

作者：

Senzaki, Y ^{[1
]}

Brichko, Y ^{[1
]}

Barelli, C ^{[1
]}

Herring, R ^{[1
]}

Teasdale, D ^{[1
]}

Schaefer, M ^{[1
]}

Sisson, J ^{[1
]}

机构：

[1] ASML, Thermal Div, Scotts Valley, CA 95066 USA

来源：

SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY | 2002年 / 716卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a hot-wall rapid thermal system which permits single-wafer processing, thin gate dielectrics consisting of silicon nitride films were fabricated by low pressure chemical vapor deposition (LPCVD). Nitride layers deposited from dichlorosilane (DCS) and ammonia exhibited greatly reduced electrical leakage current compared to silane-based nitride films which are conventionally used in lamp-based single-wafer rapid thermal technology. After a postdeposition anneal, the DCS-based gate dielectric films showed better diffusion barrier properties against boron penetration than silane-based gate dielectrics at a dopant activation temperature of 1000 degreesC.

引用

页码：109 / 112

页数：4

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