Ferromagnetic Resonance Study of Ga1-x Mn x As Fabricated on (311) GaAs Wafers by Mn Ion Implantation and Pulsed-Laser Melting

被引：4
作者：
Zhou, Y. Y. [1 ]
Liu, X. [1 ]
Furdyna, J. K. [1 ]
Scarpulla, M. A. [2 ,3 ]
Dubon, O. D. [2 ,3 ]
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 01期
关键词：
Ferromagnetic resonance; Magnetic anisotropy; Ion implantation and pulsed-laser melting; (311) GaAs wafers; MAGNETIC SEMICONDUCTORS; ANISOTROPY; (GA; MN)AS;
D O I：
10.1007/s10948-009-0539-9
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a ferromagnetic resonance (FMR) study of Ga1-x Mn (x) As fabricated by Mn ion implantation (II) into (311) GaAs wafers followed by pulsed-laser melting (PLM). We measured the angular dependence of FMR at 4 K, and the data were then fitted by Stoner-Wohlfarth model to obtain the cubic and uniaxial anisotropy parameters. The observed angular behavior of FMR can be understood in terms of two contributions: a cubic anisotropy field parallel to the aOE (c) 001 > axes, and a uniaxial anisotropy field parallel to the [311] direction. Our results show that the magnetic anisotropy fields in II-PLM (Ga,Mn)As are fundamentally similar to those in Ga1-x Mn (x) As samples grown by molecular beam epitaxy (MBE), indicating that the two different growth methods lead to materials with very similar magnetic properties.
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收藏
页码：87 / 90
页数：4
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