The use of a reduced model for on-line simulations of the Czochralski growth of single crystals

被引：2
|
作者：
Olivari, E
Jacmin, P
vandenBogaert, N
Wertz, V
Dupret, F
机构：
[1] CESAME, U. de Mecan. Appliquée, Univ. Catholique de Louvain, B-1348 Louvain-la-Neuve, Av. G
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 180卷 / 3-4期
关键词：
control (model based); numerical simulation; Czochralski growth; real time simulation;
D O I：
10.1016/S0022-0248(97)00258-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A reduced dynamic simulation model is presented to accurately predict in real time the global heat transfer and the shape of the solidification front, for single crystals grown by the Czochralski process. This model, which is robust, reliable and fast, is devoted to be incorporated in a general control system, where it will behave as an observer/predictor in order to provide estimations for nonmeasurable process variables from which crystal quality can be inferred.
引用
收藏
页码：627 / 637
页数：11
相关论文
共 18 条
  • [1] Czochralski growth of antimony single crystals
    L. D. Ivanova
    Yu. V. Granatkina
    Inorganic Materials, 2007, 43 : 247 - 252
  • [2] Czochralski growth of antimony single crystals
    Ivanova, L. D.
    Granatkina, Yu. V.
    INORGANIC MATERIALS, 2007, 43 (03) : 247 - 252
  • [3] Czochralski growth of lead tungstate single crystals and their characterization
    Senguttuvan, N
    Mohan, P
    Babu, SM
    JOURNAL OF CRYSTAL GROWTH, 1998, 183 (03) : 391 - 397
  • [4] Czochralski growth of pure and doped lead tungstate single crystals
    Darabont, Al.
    Neamtu, C.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (05): : 1254 - 1256
  • [5] Mathematical Modeling of Czochralski Type Growth Processes for Semiconductor Bulk Single Crystals
    Dreyer, W.
    Druet, P. -E.
    Klein, O.
    Sprekels, J.
    MILAN JOURNAL OF MATHEMATICS, 2012, 80 (02) : 311 - 332
  • [6] Czochralski growth of NiAl single crystals: effect of crucible support insulation material
    Fan, X
    Kou, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 204 (1-2) : 108 - 114
  • [7] Mathematical Modeling of Czochralski Type Growth Processes for Semiconductor Bulk Single Crystals
    W. Dreyer
    P. -É. Druet
    O. Klein
    J. Sprekels
    Milan Journal of Mathematics, 2012, 80 : 311 - 332
  • [8] Czochralski growth and characterization of MgAl2O4 single crystals
    Bajor, Andrzej L.
    Chmielewski, Marcin
    Diduszko, Ryszard
    Kisielewski, Jaroslaw
    Lukasiewicz, Tadeusz
    Orlinski, Krzysztof
    Romaniec, Magdalena
    Szyrski, Wlodzimierz
    JOURNAL OF CRYSTAL GROWTH, 2014, 401 : 844 - 848
  • [9] THERMAL-STRESS ANALYSES OF BULK SINGLE-CRYSTALS DURING CZOCHRALSKI GROWTH - (ANISOTROPIC EFFECTS IN VARIOUS SINGLE-CRYSTALS)
    MIYAZAKI, N
    UCHIDA, H
    MUNAKATA, T
    FUKUDA, T
    JSME INTERNATIONAL JOURNAL SERIES A-MECHANICS AND MATERIAL ENGINEERING, 1994, 37 (02): : 124 - 128
  • [10] Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single Crystals
    Bottcher, Klaus
    Miller, Wolfram
    Ganschow, Steffen
    CRYSTAL RESEARCH AND TECHNOLOGY, 2021, 56 (01)
12