High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

被引：12

作者：

Guerra, Abdelouadoud ^{[1
,2
,3
]}

Haye, Emile ^{[4
]}

Achour, Amine ^{[4
]}

Harnoi, Maxime ^{[5
]}

Hadjersi, Toufik ^{[3
]}

Colomer, Jean-Francois ^{[6
]}

Pireaux, Jean-Jacques ^{[4
]}

Lucas, Stephane ^{[7
]}

Boukherroub, Rabah ^{[1
]}

机构：

[1] Univ Lille, CNRS, Cent Lille, IEMN,ISEN,Univ Valenciennes,UMR 8520, F-59000 Lille, France

[2] Univ Ferhat Abbas Setif 1, Setif 19000, Algeria

[3] CRTSE, Div TESE, 2 Bd Frantz Fanon,BP 140 Alger 7 Merveilles, Algiers, Algeria

[4] Univ Namur, NISM, LISE, 61 Rue Bruxelles, B-5000 Namur, Belgium

[5] Univ Rennes 1, Dept Microelect & Microcapteurs, UMR 6164, Campus Beaulieu,263 Ave Gen Leclerc,CS 74205, F-35042 Rennes, France

[6] Univ Namur, Serv Microscop Elect, Rue Bruxelles 61, B-5000 Namur, Belgium

[7] Univ Namur, LARN, NISM, 61 Rue Bruxelles, B-5000 Namur, Belgium

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 03期

关键词：

silicon nanowires; vapor liquid solid method; transition metal nitrides; chromium nitride; electrochemical capacitors; NITRIDE THIN-FILMS; VANADIUM NITRIDE; ELECTRODES; STORAGE; TIN;

D O I：

10.1088/1361-6528/ab4963

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M H2SO4 electrolyte, was as high as 180 mFcm(-2) at a scan rate of 5 mVs(-1) (equivalent to 31.8 mF cm(-2) at 1.6 mA cm(-2)) with an excellent electrochemical retention of 92% over 15 000 cycles. This work paves the way toward using CrN modified 3D SiNWs arrays for micro-supercapacitor application.

引用

页数：8

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