The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

被引：24

作者：

Chen, TB

Luo, ZY

Cressler, JD

Isaacs-Smith, TF

Williams, JR

Chung, GL

Clark, SD

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Sterling Semicond, Tampa, FL 33619 USA

[4] NAVSEA Crane, Crane, IN 47522 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期

关键词：

silicon carbide; MOS; radiation; passivation;

D O I：

10.1016/S0038-1101(02)00236-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of SiO2 gate oxides grown on 4H-SiC to NO passivation is presented for the first time. The effects of gamma radiation on Q(eff) are similar for n-4H-SiC MOS capacitors both with and without NO passivation, but are different in sign (negative) compared to SiO2 on Si. The variation in D-it with total dose, however, is different for the passivated versus the unpassivated samples. Comparisons between Si Sol and 4H-SiC suggest that properly passivated SiC MOSFETs should have good radiation tolerance. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2231 / 2235

页数：5

共 50 条

[41] Deep states in SiO2/p-type 4H-SiC interface
Yano, H
Inoue, N
Kimoto, T
Matsunami, H
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 841 - 844
[42] Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices
Beltran, A. M.
Duguay, S.
Strenger, C.
Bauer, A. J.
Cristiano, F.
Schamm-Chardon, S.
SOLID STATE COMMUNICATIONS, 2015, 221 : 28 - 32
[43] Spectroscopic Observation of the Interface States at the SiO2/4H-SiC(0001) Interface
Yamashita, Yoshiyuki
Nagata, Takahiro
Chikyow, Toyohiro
Hasunuma, Ryu
Yamabe, Kikuo
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2019, 17 : 56 - 60
[44] The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO2 interface
Pintilie, I.
Moscatelli, F.
Nipoti, R.
Poggi, A.
Solmi, S.
Lovlie, L. S.
Svensson, B. G.
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 326 - +
[45] Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
Pitthan, E.
Lopes, L. D.
Palmieri, R.
Correa, S. A.
Soares, G. V.
Boudinov, H. I.
Stedile, F. C.
APL MATERIALS, 2013, 1 (02):
[46] Radiation-Hard Dielectrics for 4H-SiC: A Comparison Between SiO2 and Al2O3
Usman, Muhammad
Hallen, Anders
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) : 1653 - 1655
[47] Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Ghandi, Reza
Buono, Benedetto
Domeij, Martin
Esteve, Romain
Schoner, Adolf
Han, Jisheng
Dimitrijev, Sima
Reshanov, Sergey A.
Zetterling, Carl-Mikael
Ostling, Mikael
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 259 - 265
[48] Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
Domanowska, A.
Miczek, M.
Ucka, R.
Matys, M.
Adamowicz, B.
Zywicki, J.
Taube, A.
Korwin-Mikke, K.
Gieraltowska, S.
Sochacki, M.
APPLIED SURFACE SCIENCE, 2012, 258 (21) : 8354 - 8359
[49] Evidence of tunneling in n-4H-SiC/SiO2 capacitors at low temperatures
Filip, Lucian Dragos
Pintilie, Ioana
Svensson, Bengt G.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 557 - +
[50] Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
Lee, Kung-Yen
Chang, Yu-Hao
Huang, Yan-Hao
Wu, Shuen-De
Chung, Cheng Yueh
Huang, Chih-Fang
Lee, Tai-Chou
APPLIED SURFACE SCIENCE, 2013, 282 : 126 - 132

← 1 2 3 4 5 →