The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

被引：24

作者：

Chen, TB

Luo, ZY

Cressler, JD

Isaacs-Smith, TF

Williams, JR

Chung, GL

Clark, SD

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Sterling Semicond, Tampa, FL 33619 USA

[4] NAVSEA Crane, Crane, IN 47522 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 12期

关键词：

silicon carbide; MOS; radiation; passivation;

D O I：

10.1016/S0038-1101(02)00236-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of SiO2 gate oxides grown on 4H-SiC to NO passivation is presented for the first time. The effects of gamma radiation on Q(eff) are similar for n-4H-SiC MOS capacitors both with and without NO passivation, but are different in sign (negative) compared to SiO2 on Si. The variation in D-it with total dose, however, is different for the passivated versus the unpassivated samples. Comparisons between Si Sol and 4H-SiC suggest that properly passivated SiC MOSFETs should have good radiation tolerance. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2231 / 2235

页数：5

共 50 条

[1] Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures
Idris, M. I.
Weng, M. H.
Chan, H. -K.
Murphy, A. E.
Clark, D. T.
Young, R. A. R.
Ramsay, E. P.
Wright, N. G.
Horsfall, A. B.
JOURNAL OF APPLIED PHYSICS, 2016, 120 (21)
[2] Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor
Li, Haojie
Zhang, Yuming
Tang, Xiaoyan
Li, Dongxun
Song, Qingwen
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 156 - +
[3] Growth and surface analysis of SiO2 on 4H-SiC for MOS devices
Kodigala, Subba Ramaiah
Chattopadhyay, Somnath
Overton, Charles
Ardoin, Ira
Gordon, B. J.
Johnstone, D.
Roy, D.
Barone, D.
APPLIED SURFACE SCIENCE, 2015, 330 : 465 - 475
[4] Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface
Dhar, S.
Wang, S.
Ahyi, A. C.
Isaacs-Smith, T.
Pantelides, S. T.
Williams, J. R.
Feldman, L. C.
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 949 - 954
[5] Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation
Chen, Zengjun
Xu, Yi
Garfunkel, Eric
Feldman, Leonard C.
Buyuklimanli, Temel
Ou, Wei
Serfass, Jeff
Wan, Alan
Dhar, Sarit
APPLIED SURFACE SCIENCE, 2014, 317 : 593 - 597
[6] Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
Taube, A.
Guziewicz, M.
Kosiel, K.
Golaszewska-Malec, K.
Krol, K.
Kruszka, R.
Kaminska, E.
Piotrowska, A.
BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES, 2016, 64 (03) : 547 - 551
[7] Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers
Raynaud, C.
Locatelli, M. L.
Mogniotte, J. F.
Arvinte, R.
Grosset, G.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 263
[8] Passivation and depassivation of interface traps at the SiO2/4H-SiC interface by potassium ions
Hermannsson, Petur Gordon
Sveinbjornsson, Einar O.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 761 - 764
[9] Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs
Roccaforte, Fabrizio
Fiorenza, Patrick
Giannazzo, Filippo
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3006 - N3011
[10] Microscopic Examination of SiO2/4H-SiC Interfaces
Hatakeyama, T.
Matsuhata, H.
Suzuki, T.
Shinohe, T.
Okumura, H.
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 330 - +

← 1 2 3 4 5 →