Preparation of CuInSe2 thin films by four-step process

被引：4

作者：

Wang, Yan-lai ^{[1
]}

Nie, Hong-bo ^{[1
]}

Ni, Pei-ran ^{[2
]}

Wang, Yi-min ^{[1
]}

Guo, Shi-Ju ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Technol, Beijing 100083, Peoples R China

[2] Wuxi ASIC Micro Elect Co Ltd, Wuxi 214028, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS | 2009年 / 16卷 / 04期

关键词：

CuInSe2; electrodeposition; selenization; compaction; SOLAR-CELLS; CIS FILM; ELECTRODEPOSITION; SELENIZATION;

D O I：

10.1016/S1674-4799(09)60077-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple process for the deposition of CuInSe2 thin films was described. The CuInSe2 compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results indicate that single-phase CuInSe2 is formed at 250 degrees C and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CuInSe2 film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.

引用

页码：439 / 443

页数：5

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