Carbon coatings on silicon carbide by reaction with chlorine-containing gases

被引:119
|
作者
Gogotsi, YG [1 ]
Jeon, ID [1 ]
McNallan, MJ [1 ]
机构
[1] UNIV ILLINOIS, DEPT CIVIL & MAT ENGN, CHICAGO, IL 60607 USA
关键词
D O I
10.1039/a701126a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Carbon films have been produced on the surface of beta-SiC particles by reaction with Ar-Cl-2 and Ar-Cl-2-H-2 gas mixtures at atmospheric pressure and temperatures of 600-1000 degrees C. The structure and composition of the carbon films have been investigated using XRD, SEM, EDS, TEM, FTIR and Raman spectroscopy. BET and TG were also used for measuring the amount of carbon formed in the reaction. Uniform nanoporous carbon films with surface area exceeding 1000 m(2) g(-1) were obtained by reactions with Ar-Cl-2 gas at 600-1000 degrees C. Based on Raman spectroscopy and electron diffraction data, these films were identified as nanocrystalline graphite. An addition of hydrogen to the gas mixtures results in the etching of graphitic carbon. Traces of diamond were found along with amorphous carbon after treatment in Ar-Cl-2-H-2 gas mixtures at temperatures above 900 degrees C.
引用
收藏
页码:1841 / 1848
页数:8
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