Optimization of (Zn,Sn)O buffer layer in Cu(In,Ga)Se2 based solar cells

被引：24
|
作者：
Saadat, M. [1 ]
Amiri, O. [2 ]
Randar, A. [3 ]
机构：
[1] Univ Sistan & Baluchestan, Dept Phys, Zahedan, Iran
[2] Univ Raparin, Chem Dept, Coll Sci, Rania, Kurdistan Regio, Iraq
[3] Univ Zabol, Dept Phys, Zabol 9861335856, Iran
来源：
SOLAR ENERGY | 2019年 / 189卷
关键词：
CIGS solar cells; Buffer layer; ZnSnO; Conduction band offset; BAND-OFFSET; EFFICIENCY; PERFORMANCE; MODEL;
D O I：
10.1016/j.solener.2019.07.093
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The conventional CdS layer in Cu(In1-x,Ga-x)Se-2 based solar cells replaced by (Zn1-y,Sn-y)O as a buffer layer and the solar performance analyzed. An initial model based on an experimental device has been established. The dependence of solar cells performance on the change of Ga concentrations in CIGS absorber and Sn concentrations ZnSnO (band gap of ZnSnO) buffer layer was investigated. The optimum values of Ga and Sn concentrations were found at x = 1 and y = 0.2, leading to a conversion efficiency of 25.36%.
引用
收藏
页码：464 / 470
页数：7
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