Capacity of various exponential bidirectional associative memories

被引：1
|
作者：
Eom, TD [1 ]
Lee, CY [1 ]
Lee, JJ [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusung Gu, Taejon 305701, South Korea
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 07期
关键词：
D O I：
10.1049/el:20000540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The capacities of various exponential bidirectional associative memories (eBAMs) are derived and compared.
引用
收藏
页码：612 / 613
页数：2
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