Characterization of Low-Inductance SiC Module With Integrated Capacitors for Aircraft Applications Requiring Low Losses and Low EMI Issues

被引:30
作者
Cougo, Bernardo [1 ]
Sathler, Hans Hoffmann [1 ]
Riva, Raphael [1 ]
Dos Santos, Victor [1 ,2 ]
Roux, Nicolas [3 ]
Sareni, Bruno [3 ]
机构
[1] IRT St Exupery, F-31405 Toulouse, France
[2] SAFRAN SA, F-31700 Blagnac, France
[3] Laplace, Laplace Lab, F-31071 Toulouse, France
关键词
Switches; Silicon carbide; Aircraft; Multichip modules; MOSFET; Switching loss; Electromagnetic interference (EMI); low-inductance module; loss measurement; more electrical aircraft (MEA); modified opposition method (MOM); silicon carbide (SiC) module; switching energy; POWER-DENSITY;
D O I
10.1109/TPEL.2020.3014529
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Future aircrafts will be composed of high number of power converters having always higher power density and efficiency. In order to increase performance of such converters, a good option is the use of silicon carbide (SiC) transistors. Although these components reduce losses when compared to their silicon-based counterpart, they increase switching speed and overshoot during commutation, which can cause serious electromagnetic interference issues and overvoltages on loads connected to these converters. For that reason, power modules containing SiC transistors must have the lowest possible parasitic inductance. This article presents a multilevel low-inductance SiC power module designed to optimize a three-phase 540 V/15 kVA inverter for modern aircrafts. Precise dynamic characterization is performed in order to accurately determine switching energies and to show improvement of loss performance of this power module when compared to discrete components and also to power modules from the market. Inverter input and output common mode current reduction due to integrated common mode capacitors in the power module is experimentally shown.
引用
收藏
页码:8230 / 8242
页数:13
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