Thermal donor formation in silicon enhanced by high-energy helium irradiation

被引：16

作者：

Hazdra, P. ^{[1
]}

Komarnitskyy, V. ^{[1
]}

机构：

[1] Czech Tech Univ, Fac Elect Engn, Dept Microelect, CZ-16627 Prague 6, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 253卷 / 1-2期

关键词：

alphas; silicon; irradiation; thermal donors; lifetime control;

D O I：

10.1016/j.nimb.2006.10.038

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The enhanced thermal donor (TD) formation was investigated in the float-zone n-type silicon irradiated with 7 MeV helium ions at fluences from 5 x 10(9) to 1 x 10(12) cm(-2) and subsequently annealed up to 500 degrees C. Results show that radiation damage produced by helium ions remarkably enhances TD formation when annealing temperature exceeds 375 degrees C, i.e. when the majority of vacancy-related recombination centers anneals out. At low fluences (below 1 x 10(11) cm(-2)), the profile of radiation enhanced TD follows well the distribution of primary damage-vacancies. The excess concentration of TD is proportional to helium fluence and peaks at 1 X 10, 4 cm(-3) if annealing temperature reaches 475 degrees C. At higher fluences of helium, annealing temperature must be increased to stimulate formation of excess TDs. In this case, the concentration profile of TDs is more complex. Its growth starts from the irradiated surface and, with increasing temperature, it gradually extends up to the end-of-range of helium ions. Again, the excess TDs reach its maximum concentration of about 1.2 x 10(14) cm(-3) at 475 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：187 / 191

页数：5

共 13 条

[1] Evidence for identification of the divacancy-oxygen center in Si [J].

Alfieri, G ;

Monakhov, EV ;

Avset, BS ;

Svensson, BG .

PHYSICAL REVIEW B, 2003, 68 (23)

[2] Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400-700 °C [J].

Antonova, IV ;

Gulyev, MB ;

Safronov, LN ;

Smagulova, SA .

MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) :385-391

[3] Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage [J].

Hazdra, P ;

Komaritskyy, V .

MICROELECTRONICS JOURNAL, 2006, 37 (03) :197-203

[4] Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques [J].

Hazdra, P ;

Vobecky, J ;

Brand, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4) :414-418

[5] The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon [J].

Li, YX ;

Guo, HY ;

Liu, BD ;

Liu, TJ ;

Hao, QY ;

Liu, CC ;

Yang, DR ;

Que, DL .

JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) :6-9

[6] Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si -: art. no. 233207 [J].

Monakhov, EV ;

Avset, BS ;

Hallén, A ;

Svensson, BG .

PHYSICAL REVIEW B, 2002, 65 (23) :2332071-2332074

[7] Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures [J].

Neustroev, EP ;

Antonova, IV ;

Popov, VP ;

Kilanov, DV ;

Misiuk, A .

PHYSICA B, 2000, 293 (1-2) :44-48

[8] Thermal donor formation in crystalline silicon irradiated by high energy ions [J].

Neustroev, EP ;

Antonova, IV ;

Popov, VP ;

Stas, VF ;

Skuratov, VA ;

Didyk, AY .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 171 (04) :443-447

[9]

NTSOENZOK E, 1995, P RADECS, V95, P85

[10] ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS [J].

OHMURA, Y ;

ZOHTA, Y ;

KANAZAWA, M .

SOLID STATE COMMUNICATIONS, 1972, 11 (01) :263-&

← 1 2 →