Effect of Poly(vinylphenol) on the Ferroelectric Performance of Poly(vinylidene fluoride-trifluoroethylene)

被引:8
作者
Mi, Ce [1 ]
Gao, Nan [1 ]
Li, Huihui [1 ]
Liu, Junteng [1 ]
Sun, Xiaoli [1 ]
Yan, Shouke [1 ,2 ]
机构
[1] Beijing Univ Chem Technol, Beijing Adv Innovat Ctr Soft Matter Sci & Engn, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
[2] Qingdao Univ Sci & Technol, Shandong Prov Key Lab Rubber Plast, Minist Educ, Key Lab Rubber Plast, Qingdao 266042, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
poly(vinylidene fluoride-trifluoroethylene); poly(vinylphenol); blend; ferroelectric; nonvolatile; FLUORIDE-TRIFLUOROETHYLENE COPOLYMERS; FIELD-EFFECT TRANSISTORS; THIN-FILMS; PHASE-TRANSITION; SWITCHING BEHAVIOR; MEMORY; PVDF; ORIENTATION; CRYSTALS; MORPHOLOGY;
D O I
10.1021/acsapm.9b00060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structures and ferroelectric properties of poly(vinylidene fluoride-trifluoroethylene)/poly(vinylphenol), i.e., P-(VDF-TrFE)/PVPh, blends are studied. It is found that a small amount of PVPh segregates as small nanodomains distributed homogeneously on the surface of a P(VDF-TrFE) film. The incorporation of PVPh depresses the Curie transition temperature and remnant polarization of P(VDF-TrFE) slightly. It enhances the coercive electric field (E-c) slightly but improves the thermal stability of ferroelectric properties by nearly 30 degrees C with 5 wt % PVPh. In addition, by maintaining the relatively high permittivity, the addition of PVPh effectively lowers the dielectric losses. This provides an efficient and simple way to fabricate P(VDF-TrFE)-based nonvolatile flexible memories with low leakage, high thermal stability, and high breakdown strength.
引用
收藏
页码:1971 / 1978
页数:15
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