The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

被引：50

作者：

Hinkle, C. L. ^{[1
,2
]}

Milojevic, M. ^{[1
]}

Vogel, E. M. ^{[1
,2
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

关键词：

X-RAY PHOTOEMISSION; HIGH-K; GATE; SPECTROSCOPY; MOSFET; MOBILITY; LAYER;

D O I：

10.1063/1.3249577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The detection and removal of interfacial oxides on InGaAs semiconductors is of critical importance for their implementation as high-mobility channels for improved complementary metal oxide semiconductor device performance. X-ray photoelectron spectroscopy is a powerful tool to determine the chemical bonding at these interfaces. To correctly analyze these spectra, one must consider the binding energies and escape depths of the core-level electrons being detected, as monolayer level interfacial oxides (As-O and Ga-O) are detectable only in certain surface sensitive spectral regions. Also, inherent asymmetries associated with the In spectra must be taken into account for analysis of In-oxide bonding. (C) 2009 American Institute of Physics. [doi:10.1063/1.3249577]

引用

页数：3

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