High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

被引：22

作者：

Liu, Xinke ^{[1
]}

Chin, Hock-Chun ^{[1
]}

Tan, Leng Seow ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 01期

关键词：

Flatband voltage shift; frequency dispersion; gallium nitride (GaN); high-k; in situ surface passivation; interface state density; ELECTRON-MOBILITY TRANSISTORS; GATE OXIDE; INTERFACE; DENSITY;

D O I：

10.1109/LED.2009.2035144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first demonstration of an in situ surface-passivation technology for a GaN substrate using vacuum anneal (VA) and silane (SiH(4)) treatment in a metal-organic chemical vapor deposition multichamber tool. Excellent electrical properties were obtained for TaN/HfAlO/GaN capacitors. Interface state density D(it) was measured from midgap to near-conduction-band edge (E(C)) using the conductance method at high temperatures, and the lowest D(it) of 1 x 10(11) cm (2) . eV(-1) at the midgap was achieved. Multiple frequency capacitance-voltage (C-V) measurement (10, 400, and 500 kHz) showed little frequency dispersion. Furthermore, the TaN/HfAlO/GaN stack was studied using high-resolution transmission electron microscopy, and the effectiveness of passivation using VA and SiH(4) was evaluated using high-resolution X-ray photoelectron spectroscopy. The method reported here effectively removes the native oxide and passivates the GaN surface during the high-k dielectric-deposition process.

引用

页码：8 / 10

页数：3

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