A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters

被引：754

作者：

Lu, Bin ^{[1
]}

Sharma, Santosh K. ^{[2
]}

机构：

[1] Eaton Corp, Innovat Ctr, Milwaukee, WI 53216 USA

[2] Eaton Corp, India Engn Ctr, Pune 411014, Maharashtra, India

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2009年 / 45卷 / 05期

关键词：

Fault diagnosis; gate-misfiring fault; insulated gate bipolar transistor (IGBT); open-circuit fault; power inverter; short-circuit fault; PWM INVERTER; MODES; DRIVE;

D O I：

10.1109/TIA.2009.2027535

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a survey on existing methods for fault diagnosis and protection of insulated gate bipolar transistors with special focus on those used in three-phase power inverters. Twenty-one methods for open-circuit faults and ten methods for short-circuit faults are evaluated and summarized, based on their performance and implementation efforts. The gate-misfiring faults and their diagnostic methods are also briefly discussed. Finally, the promising methods are recommended for future work.

引用

页码：1770 / 1777

页数：8

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