Stress at the initial stage of growth for Lennard-Jones films

被引:0
|
作者
Zientarski, Tomasz [1 ]
Chocyk, Dariusz [2 ]
机构
[1] Marie Curie Sklodowska Univ, Dept Modelling Phys Chem Processes, PL-20614 Lublin, Poland
[2] Lublin Univ Technol, Dept Appl Phys, PL-20618 Lublin, Poland
关键词
film growth; stress; molecular dynamics simulation; EVOLUTION;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Molecular dynamics simulation was used to study the influence of a relative size of adsorbed and substrate atoms on the stress of growing films. Atoms in the system interact via the Lennard-Jones potential. The simulations were performed at a fixed value of systems temperature. The relative size of deposited atoms was changed in the range from 0.7 to 1.2, relatively to the size of substrate atoms. Proposed modeling allows to explain the behaviour of mean biaxial stress for systems with different sizes of adsorbed atoms and a substrate. For considered systems, significant changes in mean biaxial stress have only first three monolayers.
引用
收藏
页码:975 / 979
页数:5
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