Two-tier push-pull rf power amplifier for basestation applications

被引:2
|
作者
Patel, Dhruvit H. [1 ]
Elsharawy, Elbadawy A. [1 ]
Beishline, David W. [1 ,2 ]
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Freescale Semiconductor, Tempe, AZ 85284 USA
来源
2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年
关键词
power amplifier;
D O I
10.1109/MWSYM.2006.249784
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Radio frequency spectrum is expensive and sophisticated modulation techniques, leading to wide, dynamic signals require linear amplification. The penalty for achieving linearity is efficiency. The challenge is therefore to develop power amplifiers which offer high linearity and high efficiency in the back-off. In this paper, the idea of Modified Doherty Amplifier ill is extended by using a push-pull class-B amplifier in place of class-AB amplifier and a complementary class-C amplifier in place of single ended. class-C amplifier to improve linearity and to provide high efficiency in back-off.
引用
收藏
页码:1891 / +
页数:2
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