The properties of Schottky junctions on Nb-doped SrTiO3 (001)

被引：66
|
作者：
Shimizu, T
Gotoh, N
Shinozaki, N
Okushi, H
机构：
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305
[2] Science University of Tokyo, Noda, Chiba 278
[3] Tokai University, Hiratsuka, Kanagawa 259-12
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
关键词：
Nb-doped SrTiO3; Ozone treatment; Schottky barrier height; ideality factor; Schottky-Mott rule;
D O I：
10.1016/S0169-4332(97)80114-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A systematic Investigation of surface treatments for metal/Nb-doped SrTiO3 (NSTO) (001) junctions has been described. Well-controlled metal/NSTO (001) interfaces have been obtained using in-situ deposition of metal electrodes on a NSTO surface soon after the surface treatment using high-purity ozone. As a result, the current-voltage (I-V) characteristics of the Au/NSTO and Cu/NSTO Schottky barrier (SB) junctions show high rectification ratios over nine orders of magnitude. The SE heights evaluated from the I-V characteristics are 1.42 eV fur Au/NSTO and 1.02 eV for Cu/NSTO.
引用
收藏
页码：400 / 405
页数：6
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