InN Quantum Dot Based Infra-Red Photodetectors

被引：10

作者：

Shetty, Arjun ^{[1
]}

Kumar, Mahesh ^{[2
]}

Roul, Basanta ^{[3
]}

Vinoy, K. J. ^{[1
]}

Krupanidhi, S. B. ^{[3
]}

机构：

[1] Indian Inst Sci, Elect Commun Engn, Bangalore 560012, Karnataka, India

[2] Indian Inst Technol, Ctr Informat & Commun Technol, Jodhpur 342011, Rajasthan, India

[3] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 01期

关键词：

Indium Nitride; Quantum Dots; IR Photodetector; Molecular Beam Epitaxy; MOLECULAR-BEAM EPITAXY; DROPLET EPITAXY; III-NITRIDES; BAND-GAP; GROWTH; SI; PHOTORESPONSE; SUBSTRATE; INGAAS; LAYER;

D O I：

10.1166/jnn.2016.10679

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithography steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

引用

页码：709 / 714

页数：6

共 37 条

[11]

2-O

[12] HIGH-SPEED INGAAS ON SI METAL-SEMICONDUCTOR-METAL PHOTODETECTORS [J].