Stochastic Memory Devices for Security and Computing

被引:116
作者
Carboni, Roberto [1 ,2 ]
Ielmini, Daniele [1 ,2 ]
机构
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy
基金
欧盟地平线“2020”; 欧洲研究理事会;
关键词
phase-change memory; physical unclonable functions; resistive switching memory; spin-transfer torque memory; stochastic computing; true random number generators; PHASE-CHANGE MEMORY; RANDOM-ACCESS-MEMORY; RANDOM NUMBER GENERATION; MAGNETIC MULTILAYER; PART I; STATISTICAL FLUCTUATIONS; MEMRISTIVE DEVICES; SILICON-OXIDE; SPIN; NOISE;
D O I
10.1002/aelm.201900198
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
With the widespread use of mobile computing and internet of things, secured communication and chip authentication have become extremely important. Hardware-based security concepts generally provide the best performance in terms of a good standard of security, low power consumption, and large-area density. In these concepts, the stochastic properties of nanoscale devices, such as the physical and geometrical variations of the process, are harnessed for true random number generators (TRNGs) and physical unclonable functions (PUFs). Emerging memory devices, such as resistive-switching memory (RRAM), phase-change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM), rely on a unique combination of physical mechanisms for transport and switching, thus appear to be an ideal source of entropy for TRNGs and PUFs. An overview of stochastic phenomena in memory devices and their use for developing security and computing primitives is provided. First, a broad classification of methods to generate true random numbers via the stochastic properties of nanoscale devices is presented. Then, practical implementations of stochastic TRNGs, such as hardware security and stochastic computing, are shown. Finally, future challenges to stochastic memory development are discussed.
引用
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页数:27
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