Hybrid vertical-cavity laser integration on silicon

被引：0

作者：

Haglund, Emanuel P. ^{[1
]}

Kumari, Sulakshna ^{[2
,3
]}

Gustavsson, Johan S. ^{[1
]}

Haglund, Erik ^{[1
]}

Roelkens, Gunther ^{[2
,3
]}

Baets, Roel G. ^{[2
,3
]}

Larsson, Anders ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

[2] Univ Ghent, INTEC Dept, Photon Res Grp, IMEC, Ghent, Belgium

[3] Univ Ghent, Ctr Nano & Biophoton, Ghent, Belgium

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS XXI | 2017年 / 10122卷

基金：

欧盟地平线“2020”;

关键词：

hybrid vertical-cavity; vertical-cavity surface-emitting laser; heterogeneous integration; photonic integration; silicon photonics; VCSEL;

D O I：

10.1117/12.2256983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

引用

页数：8

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