Hybrid vertical-cavity laser integration on silicon

被引：0
|
作者：
Haglund, Emanuel P. [1 ]
Kumari, Sulakshna [2 ,3 ]
Gustavsson, Johan S. [1 ]
Haglund, Erik [1 ]
Roelkens, Gunther [2 ,3 ]
Baets, Roel G. [2 ,3 ]
Larsson, Anders [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[2] Univ Ghent, INTEC Dept, Photon Res Grp, IMEC, Ghent, Belgium
[3] Univ Ghent, Ctr Nano & Biophoton, Ghent, Belgium
来源：
VERTICAL-CAVITY SURFACE-EMITTING LASERS XXI | 2017年 / 10122卷
基金：
欧盟地平线“2020”;
关键词：
hybrid vertical-cavity; vertical-cavity surface-emitting laser; heterogeneous integration; photonic integration; silicon photonics; VCSEL;
D O I：
10.1117/12.2256983
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
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页数：8
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